IGBT Modules 650V Vces 150A Ic 3 Levels Half-Bridge
Lead Time: 0 Days
Products specifications
Configuration | Half Bridge |
Pd - Power Dissipation | 600 W |
Maximum Operating Temperature | + 175 C |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.7 V |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 650 V |
Continuous Collector Current at 25 C | 201 A |