SUP80090E-GE3

MOSFET 150V Vds 20V Vgs TO-220

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MOSFETs 150V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Rds On - Drain-Source Resistance	7.8 mOhms
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	95 nC
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	150 V
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Tradename	ThunderFET
Id - Continuous Drain Current	128 A
Configuration	Single
Number of Channels	1 Channel

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Products specifications

Rds On - Drain-Source Resistance	7.8 mOhms
Minimum Operating Temperature	- 55 C
Technology	Si
Packaging	Tube
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Qg - Gate Charge	95 nC
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	150 V
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Tradename	ThunderFET
Id - Continuous Drain Current	128 A
Configuration	Single
Number of Channels	1 Channel