SUP70101EL-GE3

MOSFET -100V Vds 20V Vgs TO-220AB

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MOSFETs -100V Vds 20V Vgs TO-220AB
Lead Time: 182 Days

Products specifications

Number of Channels	1 Channel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	120 A
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	11.4 mOhms
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Transistor Polarity	P-Channel
Technology	Si
Qg - Gate Charge	125 nC

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Products specifications

Number of Channels	1 Channel
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	120 A
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	100 V
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	11.4 mOhms
Vgs - Gate-Source Voltage	20 V
Mounting Style	Through Hole
Transistor Polarity	P-Channel
Technology	Si
Qg - Gate Charge	125 nC