SUP70060E-GE3

MOSFET 100V Vds 20V Vgs TO-220

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MOSFETs 100V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Qg - Gate Charge	81 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Tradename	ThunderFET
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Pd - Power Dissipation	200 W
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Rds On - Drain-Source Resistance	4.8 mOhms
Packaging	Tube
Id - Continuous Drain Current	131 A
Vds - Drain-Source Breakdown Voltage	100 V

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Products specifications

Qg - Gate Charge	81 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Tradename	ThunderFET
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Pd - Power Dissipation	200 W
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Rds On - Drain-Source Resistance	4.8 mOhms
Packaging	Tube
Id - Continuous Drain Current	131 A
Vds - Drain-Source Breakdown Voltage	100 V