SUP70040E-GE3

MOSFET 100V Vds 20V Vgs TO-220
Lead Time: 38 Days

SKU: SUP70040E-GE3

Availability: 547 in stock

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R 37.42

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MOSFETs 100V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Technology	Si
Id - Continuous Drain Current	120 A
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Number of Channels	1 Channel
Tradename	TrenchFET
Channel Mode	Enhancement
Qg - Gate Charge	120 nC
Rds On - Drain-Source Resistance	3.2 mOhms
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	375 W

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Products specifications

Vgs - Gate-Source Voltage	20 V
Technology	Si
Id - Continuous Drain Current	120 A
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Packaging	Tube
Number of Channels	1 Channel
Tradename	TrenchFET
Channel Mode	Enhancement
Qg - Gate Charge	120 nC
Rds On - Drain-Source Resistance	3.2 mOhms
Maximum Operating Temperature	+ 175 C
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	375 W