SUP70030E-GE3

MOSFET 100V Vds; 20V Vgs TO-220AB
Lead Time: 280 Days

SKU: SUP70030E-GE3

Availability: 1696 in stock

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R 91.70

R 51.91

R 47.43

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R 42.43

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MOSFETs 100V Vds; 20V Vgs TO-220AB
Lead Time: 154 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Qg - Gate Charge	214 nC
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	3.18 mOhms
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Configuration	Single
Mounting Style	Through Hole
Packaging	Tube
Id - Continuous Drain Current	150 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Qg - Gate Charge	214 nC
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	3.18 mOhms
Channel Mode	Enhancement
Pd - Power Dissipation	375 W
Configuration	Single
Mounting Style	Through Hole
Packaging	Tube
Id - Continuous Drain Current	150 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V