SUP60030E-GE3

MOSFET 80V Vds 20V Vgs TO-220

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MOSFETs 80V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Tradename	TrenchFET
Id - Continuous Drain Current	120 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	141 nC
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	375 W
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	80 V
Mounting Style	Through Hole
Packaging	Tube
Rds On - Drain-Source Resistance	2.8 mOhms

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Tradename	TrenchFET
Id - Continuous Drain Current	120 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	141 nC
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	375 W
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	80 V
Mounting Style	Through Hole
Packaging	Tube
Rds On - Drain-Source Resistance	2.8 mOhms