SUP50020EL-GE3

MOSFET 60V Vds 20V Vgs TO-220

SKU: SUP50020EL-GE3

Availability: 368 in stock

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R 86.96

R 61.14

R 59.56

R 52.44

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MOSFETs 60V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Mounting Style	Through Hole
Qg - Gate Charge	126 nC
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Rds On - Drain-Source Resistance	2.3 mOhms
Pd - Power Dissipation	375 W
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	120 A
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	TrenchFET

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Products specifications

Mounting Style	Through Hole
Qg - Gate Charge	126 nC
Vgs - Gate-Source Voltage	10 V
Configuration	Single
Rds On - Drain-Source Resistance	2.3 mOhms
Pd - Power Dissipation	375 W
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	120 A
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	60 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	TrenchFET