SUP40010EL-GE3

MOSFET 40V Vds 20V Vgs TO-220
Lead Time: 0 Days

SKU: SUP40010EL-GE3

Availability: 376 in stock

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R 39.00

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MOSFETs 40V Vds 20V Vgs TO-220
Lead Time: 182 Days

Products specifications

Pd - Power Dissipation	375 W
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.47 mOhms
Configuration	Single
Id - Continuous Drain Current	120 A
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	230 nC
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Technology	Si
Mounting Style	Through Hole

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Products specifications

Pd - Power Dissipation	375 W
Tradename	TrenchFET
Vgs th - Gate-Source Threshold Voltage	1.2 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.47 mOhms
Configuration	Single
Id - Continuous Drain Current	120 A
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	230 nC
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Technology	Si
Mounting Style	Through Hole