SUM90330E-GE3

MOSFET 200V Vds 20V Vgs TO-263

Availability: 2059 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

800+

Price

R 32.41

R 24.96

R 19.58

R 17.26

Free shipping

MOSFETs 200V Vds 20V Vgs TO-263
Lead Time: 182 Days

Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	125 W
Technology	Si
Qg - Gate Charge	32 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	31.2 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	35.1 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C

Your name *

Your email *

Enquiry *

Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	125 W
Technology	Si
Qg - Gate Charge	32 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	31.2 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	35.1 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C