SUM80090E-GE3

MOSFET 150V Vds 20V Vgs D2PAK (TO-263)

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MOSFETs 150V Vds 20V Vgs D2PAK (TO-263)
Lead Time: 182 Days

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	TrenchFET
Id - Continuous Drain Current	128 A
Configuration	Single
Qg - Gate Charge	95 nC
Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	7.5 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	375 W
Vds - Drain-Source Breakdown Voltage	150 V

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	TrenchFET
Id - Continuous Drain Current	128 A
Configuration	Single
Qg - Gate Charge	95 nC
Channel Mode	Enhancement
Technology	Si
Rds On - Drain-Source Resistance	7.5 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	375 W
Vds - Drain-Source Breakdown Voltage	150 V