SUM70040E-GE3

MOSFET 100V Vds 20V Vgs D2PAK (TO-263)

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MOSFETs 100V Vds 20V Vgs D2PAK (TO-263)
Lead Time: 182 Days

Products specifications

Tradename	TrenchFET
Technology	Si
Rds On - Drain-Source Resistance	3.2 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	120 A
Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	375 W
Configuration	Single
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	120 nC

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Products specifications

Tradename	TrenchFET
Technology	Si
Rds On - Drain-Source Resistance	3.2 mOhms
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	120 A
Vds - Drain-Source Breakdown Voltage	100 V
Pd - Power Dissipation	375 W
Configuration	Single
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	120 nC