SUM70030E-GE3

MOSFET 100V Vds; 20V Vgs TO-263

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R 64.83

R 46.12

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MOSFETs 100V Vds; 20V Vgs TO-263
Lead Time: 154 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	150 A
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	2.88 mOhms
Configuration	Single
Pd - Power Dissipation	375 W
Channel Mode	Enhancement
Qg - Gate Charge	214 nC
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Tube
Technology	Si

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Products specifications

Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	150 A
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	2.88 mOhms
Configuration	Single
Pd - Power Dissipation	375 W
Channel Mode	Enhancement
Qg - Gate Charge	214 nC
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Tube
Technology	Si