SUM50020E-GE3

MOSFET 60V Vds TrenchFET TO-220AB

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R 49.54

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MOSFETs 60V Vds TrenchFET TO-263-3
Lead Time: 182 Days

Products specifications

Rds On - Drain-Source Resistance	2.4 mOhms
Technology	Si
Number of Channels	1 Channel
Tradename	TrenchFET
Qg - Gate Charge	128 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Pd - Power Dissipation	375 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Minimum Operating Temperature	- 55 C

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Products specifications

Rds On - Drain-Source Resistance	2.4 mOhms
Technology	Si
Number of Channels	1 Channel
Tradename	TrenchFET
Qg - Gate Charge	128 nC
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Id - Continuous Drain Current	120 A
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Pd - Power Dissipation	375 W
Configuration	Single
Vds - Drain-Source Breakdown Voltage	60 V
Minimum Operating Temperature	- 55 C