SUM50010E-GE3

MOSFET 60V Vds; 20V Vgs TO-263

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R 47.17

R 45.06

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MOSFETs 60V Vds; 20V Vgs TO-263
Lead Time: 154 Days

Products specifications

Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	375 W
Packaging	Tube
Qg - Gate Charge	212 nC
Id - Continuous Drain Current	150 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	1.75 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C

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Products specifications

Technology	Si
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	375 W
Packaging	Tube
Qg - Gate Charge	212 nC
Id - Continuous Drain Current	150 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Rds On - Drain-Source Resistance	1.75 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C