SUM10250E-GE3

MOSFET 250V Vds 20V Vgs D2PAK (TO-263)

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MOSFETs 250V Vds 20V Vgs D2PAK (TO-263)
Lead Time: 182 Days

Products specifications

Channel Mode	Enhancement
Configuration	Single
Packaging	Tube
Transistor Polarity	N-Channel
Tradename	TrenchFET
Rds On - Drain-Source Resistance	24.7 mOhms
Pd - Power Dissipation	375 W
Technology	Si
Qg - Gate Charge	88 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	250 V
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	63.5 A

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Products specifications

Channel Mode	Enhancement
Configuration	Single
Packaging	Tube
Transistor Polarity	N-Channel
Tradename	TrenchFET
Rds On - Drain-Source Resistance	24.7 mOhms
Pd - Power Dissipation	375 W
Technology	Si
Qg - Gate Charge	88 nC
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	250 V
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	63.5 A