SUG90090E-GE3

MOSFET 200V Vds ThunderFET 100A Id +/-20V Vgs

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R 55.08

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MOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs
Lead Time: 182 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	200 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	395 W
Channel Mode	Enhancement
Qg - Gate Charge	129 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	7.9 mOhms
Number of Channels	1 Channel
Configuration	Single
Maximum Operating Temperature	+ 175 C
Mounting Style	Through Hole
Id - Continuous Drain Current	100 A

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Products specifications

Vds - Drain-Source Breakdown Voltage	200 V
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	395 W
Channel Mode	Enhancement
Qg - Gate Charge	129 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	7.9 mOhms
Number of Channels	1 Channel
Configuration	Single
Maximum Operating Temperature	+ 175 C
Mounting Style	Through Hole
Id - Continuous Drain Current	100 A