SUG80050E-GE3

MOSFET 150V Vds 20V Vgs TO-247

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R 96.71

R 76.16

R 64.56

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MOSFETs 150V Vds 20V Vgs TO-247
Lead Time: 182 Days

Products specifications

Pd - Power Dissipation	500 W
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	4.5 mOhms
Id - Continuous Drain Current	100 A
Packaging	Tube
Channel Mode	Enhancement
Qg - Gate Charge	165 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Technology	Si
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Vds - Drain-Source Breakdown Voltage	150 V

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Products specifications

Pd - Power Dissipation	500 W
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	4.5 mOhms
Id - Continuous Drain Current	100 A
Packaging	Tube
Channel Mode	Enhancement
Qg - Gate Charge	165 nC
Vgs th - Gate-Source Threshold Voltage	2 V
Technology	Si
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Vds - Drain-Source Breakdown Voltage	150 V