SUD80460E-GE3

MOSFET 150V Vds 42A Id 10.5nC Qg Typ.

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MOSFETs 150V Vds 42A Id 10.5nC Qg Typ.
Lead Time: 182 Days

Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	150 V
Qg - Gate Charge	16 nC
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	42 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	37.2 mOhms
Pd - Power Dissipation	65.2 W
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V

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Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	150 V
Qg - Gate Charge	16 nC
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	42 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	37.2 mOhms
Pd - Power Dissipation	65.2 W
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V