SI2319DDS-T1-GE3

MOSFETs -40V Vds 20V Vgs SOT-23
Lead Time: 119 Days

SKU: SI2319DDS-T1-GE3

Availability: 129987 in stock

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MOSFETs -40V Vds 20V Vgs SOT-23
Lead Time: 119 Days

Products specifications

Rds On - Drain-Source Resistance	75 mOhms
Channel Mode	Enhancement
Id - Continuous Drain Current	3.6 A
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	1.7 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	12.5 nC
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	10 V

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Products specifications

Rds On - Drain-Source Resistance	75 mOhms
Channel Mode	Enhancement
Id - Continuous Drain Current	3.6 A
Number of Channels	1 Channel
Configuration	Single
Pd - Power Dissipation	1.7 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	40 V
Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	12.5 nC
Transistor Polarity	P-Channel
Vgs - Gate-Source Voltage	10 V