TGF3015-SM

GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Lead Time: 140 Days

SKU: TGF3015-SM

Availability: 208 in stock

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GaN FETs .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
Lead Time: 140 Days

Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	15.3 W
Vds - Drain-Source Breakdown Voltage	32 V
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Packaging	Tray
Output Power	11 W
Technology	GaN SiC
Gain	17.1 dB
Product Type	RF JFET Transistors
Id - Continuous Drain Current	557 mA

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Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	15.3 W
Vds - Drain-Source Breakdown Voltage	32 V
Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Packaging	Tray
Output Power	11 W
Technology	GaN SiC
Gain	17.1 dB
Product Type	RF JFET Transistors
Id - Continuous Drain Current	557 mA