TGF2979-SM

GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
Lead Time: 140 Days

SKU: TGF2979-SM

Availability: 50 in stock

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GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
Lead Time: 140 Days

Products specifications

Pd - Power Dissipation	49 W
Id - Continuous Drain Current	1.8 A
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Packaging	Tray
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	32 V
Technology	GaN SiC
Product Type	RF JFET Transistors
Gain	11 dB
Output Power	22 W

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Products specifications

Pd - Power Dissipation	49 W
Id - Continuous Drain Current	1.8 A
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Transistor Type	HEMT
Transistor Polarity	N-Channel
Packaging	Tray
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	32 V
Technology	GaN SiC
Product Type	RF JFET Transistors
Gain	11 dB
Output Power	22 W