TGF2954

GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm

SKU: TGF2954

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Quantity

50+

Price

R 2,450.18

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GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm

Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	32 V
Output Power	44.5 dBm
Product Type	RF JFET Transistors
Id - Continuous Drain Current	1.7 A
Packaging	Gel Pack
Transistor Type	HEMT
Gain	19.6 dB
Technology	GaN SiC
Pd - Power Dissipation	34.5 W
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	32 V
Output Power	44.5 dBm
Product Type	RF JFET Transistors
Id - Continuous Drain Current	1.7 A
Packaging	Gel Pack
Transistor Type	HEMT
Gain	19.6 dB
Technology	GaN SiC
Pd - Power Dissipation	34.5 W
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C