TGF2953

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RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm

SKU: TGF2953

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RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm

Products specifications

Pd - Power Dissipation	17 W
Gain	18.2 dB
Maximum Drain Gate Voltage	100 V
Output Power	41.6 dBm
Vds - Drain-Source Breakdown Voltage	32 V
Id - Continuous Drain Current	820 mA
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	GaN SiC
Packaging	Gel Pack
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Pd - Power Dissipation	17 W
Gain	18.2 dB
Maximum Drain Gate Voltage	100 V
Output Power	41.6 dBm
Vds - Drain-Source Breakdown Voltage	32 V
Id - Continuous Drain Current	820 mA
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	GaN SiC
Packaging	Gel Pack
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C