RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
Products specifications
Output Power | 2.4 W |
Transistor Type | HEMT |
Id - Continuous Drain Current | 290 mA |
Vds - Drain-Source Breakdown Voltage | - |
Maximum Operating Temperature | + 85 C |
Gain | 16 dB |
Product Type | RF JFET Transistors |
Technology | GaN SiC |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 5.1 W |
Packaging | Gel Pack |
Vgs - Gate-Source Breakdown Voltage | - |
Maximum Drain Gate Voltage | - |