TGF2936

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RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN

SKU: TGF2936

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RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN

Products specifications

Technology	GaN SiC
Product Type	RF JFET Transistors
Id - Continuous Drain Current	700 mA
Transistor Polarity	N-Channel
Pd - Power Dissipation	8.9 W
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Output Power	10 W
Vds - Drain-Source Breakdown Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Gain	16 dB
Maximum Drain Gate Voltage	-
Packaging	Gel Pack

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Products specifications

Technology	GaN SiC
Product Type	RF JFET Transistors
Id - Continuous Drain Current	700 mA
Transistor Polarity	N-Channel
Pd - Power Dissipation	8.9 W
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Output Power	10 W
Vds - Drain-Source Breakdown Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Gain	16 dB
Maximum Drain Gate Voltage	-
Packaging	Gel Pack