TGF2935

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RF JFET Transistors DC-25GHz 5Watt NF 1.3dB GaN

SKU: TGF2935

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RF JFET Transistors DC-25GHz 5Watt NF 1.3dB GaN

Products specifications

Output Power	4.8 W
Minimum Operating Temperature	- 40 C
Gain	16 dB
Pd - Power Dissipation	5 W
Vds - Drain-Source Breakdown Voltage	-
Technology	GaN SiC
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	360 mA
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-

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Products specifications

Output Power	4.8 W
Minimum Operating Temperature	- 40 C
Gain	16 dB
Pd - Power Dissipation	5 W
Vds - Drain-Source Breakdown Voltage	-
Technology	GaN SiC
Transistor Type	HEMT
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	360 mA
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-