RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
Lead Time: 0 Days
Products specifications
Transistor Type | HEMT |
Minimum Operating Temperature | - 40 C |
Vgs - Gate-Source Breakdown Voltage | - |
Gain | 14 dB |
Output Power | 14 W |
Product Type | RF JFET Transistors |
Packaging | Gel Pack |
Id - Continuous Drain Current | 1 A |
Maximum Operating Temperature | + 85 C |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 15.8 W |
Vds - Drain-Source Breakdown Voltage | - |
Technology | GaN SiC |
Maximum Drain Gate Voltage | - |