GaN FETs DC-25GHz 7Watt NF 1.3dB GaN
Lead Time: 140 Days
Products specifications
Id - Continuous Drain Current | 80 mA |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 8.9 W |
Technology | GaN SiC |
Gain | 15 dB |
Output Power | 7.2 W |
Packaging | Gel Pack |
Vgs - Gate-Source Breakdown Voltage | - |
Maximum Operating Temperature | + 85 C |
Vds - Drain-Source Breakdown Voltage | - |
Transistor Type | HEMT |
Product Type | RF JFET Transistors |
Transistor Polarity | N-Channel |
Maximum Drain Gate Voltage | - |