GaN FETs DC-3.5GHz 100W 28V GaN
Products specifications
Vds - Drain-Source Breakdown Voltage | 28 V |
Product Type | RF MOSFET Transistors |
Technology | GaN SiC |
Id - Continuous Drain Current | 12 A |
Gain | 14 dB |
Packaging | Tray |
Output Power | 107 W |
Transistor Polarity | N-Channel |