GaN FETs DC-3.5GHz 100W 28V GaN
Lead Time: 140 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 28 V |
Transistor Polarity | N-Channel |
Packaging | Tray |
Technology | GaN SiC |
Gain | 14 dB |
Output Power | 107 W |
Product Type | RF MOSFET Transistors |
Id - Continuous Drain Current | 12 A |