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772-TGF2819-FL

Manufacturer: Qorvo

TGF2819-FL

GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

SKU: TGF2819-FL

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GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Products specifications

Transistor Type	HEMT
Output Power	100 W
Id - Continuous Drain Current	7.32 A
Vgs - Gate-Source Breakdown Voltage	- 2.9 V
Gain	14 dB
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	145 V
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	86 W
Maximum Operating Temperature	+ 85 C
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	32 V
Packaging	Tray
Technology	GaN SiC

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Products specifications

Transistor Type	HEMT
Output Power	100 W
Id - Continuous Drain Current	7.32 A
Vgs - Gate-Source Breakdown Voltage	- 2.9 V
Gain	14 dB
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	145 V
Minimum Operating Temperature	- 40 C
Pd - Power Dissipation	86 W
Maximum Operating Temperature	+ 85 C
Mounting Style	Screw Mount
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	32 V
Packaging	Tray
Technology	GaN SiC