TGF2120

RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz

SKU: TGF2120

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R 414.42

R 387.22

R 375.11

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RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz

Products specifications

Vds - Drain-Source Breakdown Voltage	8 V
Maximum Operating Temperature	+ 150 C
Technology	GaAs
Id - Continuous Drain Current	194 mA
Packaging	Gel Pack
Product Type	RF JFET Transistors
Gain	11 dB
Vgs - Gate-Source Breakdown Voltage	- 12 V
Transistor Type	pHEMT
Pd - Power Dissipation	4.2 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	8 V
Maximum Operating Temperature	+ 150 C
Technology	GaAs
Id - Continuous Drain Current	194 mA
Packaging	Gel Pack
Product Type	RF JFET Transistors
Gain	11 dB
Vgs - Gate-Source Breakdown Voltage	- 12 V
Transistor Type	pHEMT
Pd - Power Dissipation	4.2 W