RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
Products specifications
Id - Continuous Drain Current | 194 mA |
Transistor Type | pHEMT |
Product Type | RF JFET Transistors |
Vds - Drain-Source Breakdown Voltage | 8 V |
Vgs - Gate-Source Breakdown Voltage | - 3 V |
Gain | 12 dB |
Technology | GaAs |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.1 W |
Minimum Operating Temperature | - 65 C |
Packaging | Gel Pack |