RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
Products specifications
Product Type | RF JFET Transistors |
Gain | 13 dB |
Technology | GaAs |
Packaging | Gel Pack |
Pd - Power Dissipation | 1.4 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 65 C |
Transistor Type | pHEMT |
Id - Continuous Drain Current | 129 mA |
Vds - Drain-Source Breakdown Voltage | 8 V |
Vgs - Gate-Source Breakdown Voltage | - 15 V |