TGF2025

RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm

SKU: TGF2025

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R 167.22

R 162.11

R 151.60

R 147.57

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RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm

Products specifications

Technology	GaAs
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Id - Continuous Drain Current	81 mA
Packaging	Gel Pack
Maximum Drain Gate Voltage	12 V
Pd - Power Dissipation	890 mW
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	8 V
Vgs - Gate-Source Breakdown Voltage	- 15 V
Gain	14 dB
Transistor Type	pHEMT

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Products specifications

Technology	GaAs
Maximum Operating Temperature	+ 150 C
Product Type	RF JFET Transistors
Id - Continuous Drain Current	81 mA
Packaging	Gel Pack
Maximum Drain Gate Voltage	12 V
Pd - Power Dissipation	890 mW
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	8 V
Vgs - Gate-Source Breakdown Voltage	- 15 V
Gain	14 dB
Transistor Type	pHEMT