RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
Products specifications
Id - Continuous Drain Current | 58 mA |
Packaging | Gel Pack |
Vgs - Gate-Source Breakdown Voltage | - 15 V |
Transistor Type | pHEMT |
Minimum Operating Temperature | - 65 C |
Pd - Power Dissipation | 640 mW |
Maximum Operating Temperature | + 150 C |
Product Type | RF JFET Transistors |
Gain | 14 dB |
Technology | GaAs |
Maximum Drain Gate Voltage | 12 V |
Vds - Drain-Source Breakdown Voltage | 8 V |