T2G6001528-SG

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN

SKU: T2G6001528-SG

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R 7,504.03

R 5,088.58

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RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Output Power	17 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5 A
Technology	GaN SiC
Product Type	RF JFET Transistors
Packaging	Tray
Gain	15 dB
Pd - Power Dissipation	28 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Output Power	17 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5 A
Technology	GaN SiC
Product Type	RF JFET Transistors
Packaging	Tray
Gain	15 dB
Pd - Power Dissipation	28 W