RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
Lead Time: 0 Days
Products specifications
Packaging | Tray |
Vgs - Gate-Source Breakdown Voltage | 100 V |
Product Type | RF JFET Transistors |
Technology | GaN SiC |
Vds - Drain-Source Breakdown Voltage | 32 V |
Pd - Power Dissipation | 45 W |