T1G2028536-FS

GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

SKU: T1G2028536-FS

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

25+

Price

R 22,506.96

Free shipping

GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

Products specifications

Transistor Type	HEMT
Product Type	RF JFET Transistors
Output Power	260 W
Gain	18 dB
Maximum Operating Temperature	+ 250 C
Vgs - Gate-Source Breakdown Voltage	145 V
Id - Continuous Drain Current	24 A
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	48 V
Pd - Power Dissipation	288 W
Vds - Drain-Source Breakdown Voltage	36 V
Packaging	Tray
Technology	GaN SiC

Your name *

Your email *

Enquiry *

Products specifications

Transistor Type	HEMT
Product Type	RF JFET Transistors
Output Power	260 W
Gain	18 dB
Maximum Operating Temperature	+ 250 C
Vgs - Gate-Source Breakdown Voltage	145 V
Id - Continuous Drain Current	24 A
Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	48 V
Pd - Power Dissipation	288 W
Vds - Drain-Source Breakdown Voltage	36 V
Packaging	Tray
Technology	GaN SiC