T1G2028536-FL

GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

SKU: T1G2028536-FL

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Quantity

25+

Price

R 22,502.38

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GaN FETs DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN

Products specifications

Id - Continuous Drain Current	24 A
Gain	20.8 dB
Output Power	260 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	48 V
Pd - Power Dissipation	288 W
Vgs - Gate-Source Breakdown Voltage	145 V
Maximum Operating Temperature	+ 275 C
Vds - Drain-Source Breakdown Voltage	36 V
Technology	GaN SiC
Packaging	Tray

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Products specifications

Id - Continuous Drain Current	24 A
Gain	20.8 dB
Output Power	260 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	48 V
Pd - Power Dissipation	288 W
Vgs - Gate-Source Breakdown Voltage	145 V
Maximum Operating Temperature	+ 275 C
Vds - Drain-Source Breakdown Voltage	36 V
Technology	GaN SiC
Packaging	Tray