QPD2795

RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
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SKU: QPD2795

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R 5,174.48

R 4,755.48

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RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
Lead Time: 0 Days

Products specifications

Gain	22 dB
Transistor Type	HEMT
Maximum Drain Gate Voltage	55 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	360 mA
Vds - Drain-Source Breakdown Voltage	48 V
Maximum Operating Temperature	+ 85 C
Packaging	Waffle
Product Type	RF JFET Transistors
Pd - Power Dissipation	83.5 W
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Output Power	364 W

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Products specifications

Gain	22 dB
Transistor Type	HEMT
Maximum Drain Gate Voltage	55 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	360 mA
Vds - Drain-Source Breakdown Voltage	48 V
Maximum Operating Temperature	+ 85 C
Packaging	Waffle
Product Type	RF JFET Transistors
Pd - Power Dissipation	83.5 W
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Output Power	364 W