GaN FETs 2.62-2.69GHz GaN 200W 48V
Products specifications
Transistor Polarity | N-Channel |
Maximum Drain Gate Voltage | - |
Minimum Operating Temperature | - 40 C |
Product Type | RF JFET Transistors |
Pd - Power Dissipation | - |
Id - Continuous Drain Current | - |
Technology | GaN SiC |
Vgs - Gate-Source Breakdown Voltage | - |
Packaging | Tray |
Vds - Drain-Source Breakdown Voltage | - |
Transistor Type | HEMT |
Output Power | 200 W |
Gain | 19 dB |
Maximum Operating Temperature | - |