RF JFET Transistors 1.8-2.2GHz 440W GaN RF-EG4266A,B,C
Products specifications
Packaging | Reel |
Transistor Polarity | N-Channel |
Gain | 20.4 dB |
Transistor Type | HEMT |
Product Type | RF JFET Transistors |
Maximum Drain Gate Voltage | 55 V |
Output Power | 400 W |
Technology | GaN SiC |
Minimum Operating Temperature | - 40 C |