RF JFET Transistors 1.8-2.2GHz 330W GaN RF -EG4266D,E,F
Products specifications
Transistor Polarity | N-Channel |
Maximum Drain Gate Voltage | 55 V |
Output Power | 371 W |
Maximum Operating Temperature | + 85 C |
Product Type | RF JFET Transistors |
Packaging | Reel |
Technology | GaN SiC |
Minimum Operating Temperature | - 40 C |
Transistor Type | HEMT |
Gain | 19.1 dB |