RF JFET Transistors 2.7-2.9 GHz, 400W,50V,GaN RF Pwr Tr
Lead Time: 0 Days
Products specifications
Vgs - Gate-Source Breakdown Voltage | - 7 V to 2 V |
Transistor Type | HEMT |
Technology | GaN SiC |
Pd - Power Dissipation | 237 W |
Id - Continuous Drain Current | 13 A |
Maximum Operating Temperature | + 85 C |
Gain | 21.2 dB |
Vds - Drain-Source Breakdown Voltage | 145 V |
Minimum Operating Temperature | - 40 C |
Transistor Polarity | N-Channel |
Maximum Drain Gate Voltage | 55 V |
Product Type | RF JFET Transistors |