RF JFET Transistors 1.8-2.4GHz GaN 220W 48V
Products specifications
Maximum Operating Temperature | - |
Transistor Type | HEMT |
Pd - Power Dissipation | - |
Maximum Drain Gate Voltage | - |
Minimum Operating Temperature | - 40 C |
Product Type | RF JFET Transistors |
Vgs - Gate-Source Breakdown Voltage | - |
Vds - Drain-Source Breakdown Voltage | - |
Output Power | 220 W |
Transistor Polarity | N-Channel |
Packaging | Tray |
Gain | 21 dB |
Id - Continuous Drain Current | - |
Technology | GaN SiC |