QPD1020SR

GaN FETs 2.7-3.5GHz 30W Gain 18.4dB
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SKU: QPD1020SR

Availability: 69 in stock

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R 4,137.22

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R 2,219.68

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GaN FETs 2.7-3.5GHz 30W Gain 18.4dB
Lead Time: 0 Days

Products specifications

Technology	GaN SiC
Packaging	Reel
Output Power	31 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Gain	18.4 dB
Vds - Drain-Source Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	100 mA
Product Type	RF MOSFET Transistors

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Products specifications

Technology	GaN SiC
Packaging	Reel
Output Power	31 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Gain	18.4 dB
Vds - Drain-Source Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	100 mA
Product Type	RF MOSFET Transistors