QPD1016

GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr
Lead Time: 140 Days

SKU: QPD1016

Availability: 6 in stock

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GaN FETs DC-1.7 GHz, 500W, 50V, GaN RF Tr
Lead Time: 140 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 7 V to 1.5 V
Output Power	680 W
Transistor Type	HEMT
Id - Continuous Drain Current	70 A
Maximum Operating Temperature	+ 85 C
Gain	23.9 dB
Technology	GaN SiC
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Pd - Power Dissipation	714 W
Maximum Drain Gate Voltage	55 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	145 V
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 7 V to 1.5 V
Output Power	680 W
Transistor Type	HEMT
Id - Continuous Drain Current	70 A
Maximum Operating Temperature	+ 85 C
Gain	23.9 dB
Technology	GaN SiC
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Pd - Power Dissipation	714 W
Maximum Drain Gate Voltage	55 V