QPD1015L

GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN
Lead Time: 140 Days

SKU: QPD1015L

Availability: 25 in stock

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Price

R 9,594.45

R 6,522.77

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GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN
Lead Time: 140 Days

Products specifications

Technology	GaN SiC
Product Type	RF JFET Transistors
Output Power	70 W
Transistor Type	HEMT
Packaging	Tray
Id - Continuous Drain Current	2.5 A
Vgs - Gate-Source Breakdown Voltage	145 V
Gain	20 dB
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	50 V
Pd - Power Dissipation	64 W
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Maximum Operating Temperature	+ 85 C

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Products specifications

Technology	GaN SiC
Product Type	RF JFET Transistors
Output Power	70 W
Transistor Type	HEMT
Packaging	Tray
Id - Continuous Drain Current	2.5 A
Vgs - Gate-Source Breakdown Voltage	145 V
Gain	20 dB
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	50 V
Pd - Power Dissipation	64 W
Minimum Operating Temperature	- 40 C
Mounting Style	Screw Mount
Maximum Operating Temperature	+ 85 C